机译:晶体损伤对垂直集成的无结纳米线晶体管的影响
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea;
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea;
Department of Nano-process, National Nanofab Center (NNFC), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea;
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea;
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea;
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea;
机译:垂直集成的无结纳米线晶体管
机译:3D垂直连接门 - 全面硅纳米线晶体管朝向3D逻辑设计的紧凑型建模
机译:垂直Ge / Si核/壳纳米线无结晶体管
机译:3D垂直连接门 - 全面硅纳米线晶体管紧凑型造型
机译:无结场效应晶体管中的纳米级效应
机译:基于单晶VO2纳米线的固态场效应晶体管中增强的电子传输调制
机译:具有不对称直径和下划线长度的垂直门 - 全绕无线纳米线晶体管