机译:NH_3源分子束外延生长在Eu和Mg掺杂的GaN中的光学位点
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;
Department of Research, Interdisciplinary Graduate School of Medicine and Engineering, Division of Engineering, Electromechanical and Information System Engineering, University of Yamanashi, Kofu, Yamanashi 400-8510, Japan;
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;
Department of Research, Interdisciplinary Graduate School of Medicine and Engineering, Division of Engineering, Electromechanical and Information System Engineering, University of Yamanashi, Kofu, Yamanashi 400-8510, Japan;
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;
机译:NH_3源分子束外延生长Eu和Mg共掺杂GaN的单光点
机译:GaN外延模板上AlN外延层的NH_3源分子束外延中的应变松弛
机译:NH_3源分子束外延生长AlN外延膜中Al空位与深发射带的关系
机译:金属 - 有机气相外延,气源分子束外延和卤化物气相外延生长GaN的对比光学特征
机译:通过分子束外延生长的光学器件的自组装量子点的微观结构和光学性质。
机译:分子束外延生长GaN基体中准2D InGaN的激子发射
机译:通过激光分子束外延生长在GaN模板上的同质外延GaN纳米壁的结构,光学和电子特性