机译:HVPE生长的自立式GaN的热电系数
Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany;
NaMLab gGmbH, Noethnitzer Str. 64, 01187 Dresden, Germany;
Freiberger Compound Materials GmbH, Am-Junger-Loewe-Schacht 5, 09599 Freiberg, Germany;
Freiberger Compound Materials GmbH, Am-Junger-Loewe-Schacht 5, 09599 Freiberg, Germany;
Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany;
Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany,Samara National Research University, Moskovskoye Shosse 34, Samara 443086, Russia;
Institute for Experimental Physics, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany;
Institute for Semiconductors and Microsystems, TU Dresden, Noethnitzer Str. 64, 01187 Dresden, Germany,NaMLab gGmbH, Noethnitzer Str. 64, 01187 Dresden, Germany;
机译:在独立式HVPE-生长的GaN基材中掺入碳
机译:HVPE生长的厚自由站立GaN衬底的位错揭示和分类
机译:HVPE生长的Au /自支撑GaN肖特基接触的双高斯分布模型研究
机译:HVPE生长的独立式厚GaN衬底的位错揭示和分类
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:用HVPE使用组合缓冲层在蓝宝石上制造2英寸独立的GaN衬底
机译:HVpE GaN自支撑薄膜的弯曲:激光剥离,抛光和高压退火的影响