机译:Ge-Si核壳纳米线中的高度可调空穴量子点
NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;
NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands,Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Pingleyuan No. 100, Beijing 100024, P.R. China;
NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands,QuTech and Kavli Institute of Nanoscience, Pelft University of Technology, 2600 GA Delft, The Netherlands;
NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands;
机译:Ge-Si核壳纳米线量子点中与电场有关的g因子各向异性
机译:Ge-Si核壳纳米线量子点中与电场有关的g因子各向异性
机译:在相干紧张的[110]的GE-Si核 - 壳体纳米线中提高空穴迁移率
机译:具有高掺杂源极和漏极的顶栅Ge-Si
机译:Cdse1-Xsx / Zns合金核心 - 壳量子点的调谐尺寸和发光特性通过酒精
机译:使用混合PEDOT:PSS /金属硫化物量子点在高效的绿色磷光有机发光二极管中的空穴注入层
机译:Ge-Si核壳纳米线中的高度可调空穴量子点
机译:用分子束外延生长Gaas / Gaassb核壳纳米线的带隙调谐。