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Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer

机译：利用有效的非辐射共振能量转移改善混合发光二极管的颜色转换和效率下降

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摘要

Blue InGaN/GaN nanohole light-emitting diodes have been fabricated by soft UV-curing nanoim-print lithography, filling with CdSe/ZnS core/shell nanocrystals (NCs) as color conversion mediums. The excitonic recombination dynamics of hybrid nanohole light-emitting diodes were investigated by time-resolved photoluminescence, observing a significant reduction in the decay lifetime of excitons as a result of an efficient non-radiative resonant energy transfer, which leads to the improvement of color conversion and efficiency droop in these hybrid nanohole light-emitting diodes compared to hybrid nanocrystals/standard planar light-emitting diodes. The color-conversion efficiency and effective quantum yield of hybrid nanohole light-emitting diodes were nearly twice as much as those of hybrid standard light-emitting diodes. A model on the excitonic recombination process was proposed to explore this situation, explaining the advantages of non-radiative resonant energy transfer that avoiding energy loss associated with the intermediate light emission and conversion steps and transferring energy non-radiatively and resonantly to NCs with a higher quantum yield. The efficiency droop of hybrid nanohole light-emitting diodes was validly suppressed compared to the bare ones, even better than that of hybrid standard light-emitting diodes. It mainly results from the extraction of excess carrier concentrations in InGaN/GaN multiple quantum wells via the rapid non-radiative resonant energy transfer process under the higher injection condition, revealing a great potential to realize efficient white light emitters in the future.
机译：蓝色InGaN / GaN纳米孔发光二极管已经通过软UV固化纳米Im-print光刻技术制造，填充了CdSe / ZnS核/壳纳米晶体（NCs）作为颜色转换介质。通过时间分辨光致发光研究了混合纳米孔发光二极管的激子复合动力学，观察到由于有效的非辐射共振能量转移，激子的衰变寿命显着降低，从而改善了颜色转换与混合纳米晶体/标准平面发光二极管相比，这些混合纳米孔发光二极管的效率和效率下降。混合纳米孔发光二极管的颜色转换效率和有效量子产率几乎是混合标准发光二极管的两倍。提出了一种关于激子复合过程的模型来探讨这种情况，解释了非辐射共振能量转移的优点，即避免了与中间发光和转换步骤相关的能量损失，并且以非辐射方式和共振方式将能量转移给具有更高能量的NC量子产率。与裸露的相比，混合纳米孔发光二极管的效率下降得到了有效抑制，甚至比混合标准发光二极管更好。这主要是由于在较高注入条件下通过快速非辐射共振能量转移过程提取了InGaN / GaN多量子阱中多余的载流子浓度所致，显示出在将来实现高效白光发射器的巨大潜力。

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  • 来源
    《Applied Physics Letters》 |2016年第14期|141105.1-141105.5|共5页
  • 作者

    Zhe Zhuang; Jiangping Dai; Bin Liu; Xu Guo; Yi Li; Tao Tao; Ting Zhi; Guogang Zhang; Zili Xie; Haixiong Ge; Yi Shi; Youdou Zheng; Rong Zhang;

  • 作者单位

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China,College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China,College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People's Republic of China,Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 入库时间 2022-08-18 03:14:51

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