Lateral electric-field-driven non-volatile four-state memory in multiferroic heterostructures

摘要

A non-volatile four-state memory is formed using an in-plane side-polarization configuration in a Co/(011) Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 (Co/PMN-PT) heterostructure. The resistivity vs. electric field behavior shows a change from volatile butterfly to looplike to non-volatile butterfly characteristics when the temperature decreases from 290 K to 83 K under an electric field of 10kV/cm and then increases back to 290 K; this behavior is attributed to the strain-mediated magnetoelectric effect. In addition, the in-plane resistivity of Co film, which was measured using the four-probe technique, can be controlled both electrically and magnetically. Specifically, a non-volatile resistivity is gained by the application of electric field pulses. Additionally, a four-state memory is obtained by co-mediation of the magnetic field and electric field pulses, compared with the two different states achieved under the application of the electric field only, which indicates that our results are highly important for multi-state memory and spintronic devices applications.