机译:高温下硅上外延碳化硅界面的灾难性降解
Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute,Griffith University, Nathan QLD 4111, Australia;
Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute,Griffith University, Nathan QLD 4111, Australia;
Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute,Griffith University, Nathan QLD 4111, Australia;
Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433, USA;
Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800, Australia;
Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800, Australia;
Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute,Griffith University, Nathan QLD 4111, Australia;
机译:评论“高温下硅上外延碳化硅界面的灾难性降解” [Appl。物理来吧109,011604(2016)]
机译:对“高温下硅上外延碳化硅界面的灾难性降解”的评论[Appl。物理来吧109,196101(2016)]
机译:评估嵌入式多孔硅层对外延层的整体寿命以及外延层/多孔硅界面处界面复合的影响
机译:通过激光烧蚀碳靶向硅的外延取向碳化硅的生长及碳化硅界面的结构
机译:研究4H-碳化硅-碳化硅上低温原子沉积的氧化物及其对碳化硅/二氧化硅界面的影响。
机译:碳化硅上氢化外延石墨烯中室温铁磁性的起源
机译:回应“高温下硅外延碳化硅界面灾难性地降解”应用。物理。吧。 109,196101(2016)
机译:碳化硅基材料的高温发射率。第1卷:碳化硅基材料的高温正常光谱发射率。第2卷。热处理对碳化硅基材料发射率的影响。专题报道