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GHz spurious mode free AIN lamb wave resonator with high figure of merit using one dimensional phononic crystal tethers

机译:使用一维声子晶体系链,具有高品质因数的GHz无杂散模式AIN兰姆波谐振器

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摘要

This letter reports a spurious mode free GHz aluminum nitride (AIN) lamb wave resonator (LWR) towards high figure of merit (FOM). One dimensional gourd-shape phononic crystal (PnC) tether with large phononic bandgaps is employed to reduce the acoustic energy dissipation into the substrate. The periodic PnC tethers are based on a 1 μm-thick AIN layer with 0.26 μm-thick Mo layer on top. A clean spectrum over a wide frequency range is obtained from the measurement, which indicates a wide-band suppression of spurious modes. Experimental results demonstrate that the fabricated AIN LWR has an insertion loss of 5.2 dB and a loaded quality factor (Q) of 1893 at 1.02 GHz measured in air. An impressive ratio of the resistance at parallel resonance (R_p) to the resistance at series resonance (R_s) of 49.8 dB is obtained, which is an indication of high FOM for LWR. The high R_p to R_s ratio is one of the most important parameters to design a radio frequency filter with steep roll-off.
机译:这封信报道了一个无杂散模式的GHz氮化铝(AIN)兰姆波谐振器(LWR),朝着高品质因数(FOM)迈进。具有大声带隙的一维葫芦形声子晶体(PnC)系链可用于减少声能向基板的耗散。周期性的PnC系链基于厚度为1μm的AIN层,顶部为0.26μm的Mo层。从测量中可以获得较宽频率范围的干净频谱,这表明对杂散模式进行了宽带抑制。实验结果表明,制造的AIN LWR在空气中测量的1.02 GHz频率下具有5.2 dB的插入损耗和1893的负载品质因数(Q)。获得的并联谐振电阻(R_p)与串联谐振电阻(R_s)的令人印象深刻的比率为49.8 dB,这表明LWR的FOM高。高的R_p与R_s之比是设计具有陡峭滚降的射频滤波器的最重要参数之一。

著录项

  • 来源
    《Applied Physics Letters》 |2016年第1期|013506.1-013506.4|共4页
  • 作者单位

    Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),2 Fusionopolis Way, #08-02, Innovis, Singapore 138634;

    Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),2 Fusionopolis Way, #08-02, Innovis, Singapore 138634;

    Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),2 Fusionopolis Way, #08-02, Innovis, Singapore 138634;

    Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),2 Fusionopolis Way, #08-02, Innovis, Singapore 138634;

    Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),2 Fusionopolis Way, #08-02, Innovis, Singapore 138634;

    Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),2 Fusionopolis Way, #08-02, Innovis, Singapore 138634;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:14:41

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