机译:全等离子体增强ALD TiN / La:HfO_2 / TiN叠层的铁电性能
Moscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudny, Moscow Region, Russia;
Moscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudny, Moscow Region, Russia;
Moscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudny, Moscow Region, Russia;
Moscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudny, Moscow Region, Russia;
Technological Institute for Superhard and Novel Carbon Materials, Tsentral' naya Str. 7a, 142190 Troitsk, Moscow, Russia;
Moscow Institute of Physics and Technology, Institutskii per. 9, 141700 Dolgoprudny, Moscow Region, Russia;
机译:完全由ALD生长的TiN / Hf_(0.5)Zr_(0.5)O_2 / TiN叠层:铁电和结构性质
机译:基于Hf_(0.5)Zr_(0.5)O_2的铁电MIM结构的低温等离子体增强ALD TiN超薄膜
机译:等离子体增强原子层沉积的HfO_2缓冲层对用于非易失性存储应用的金属/铁电/绝缘体/半导体栅堆叠的结构,电和铁电性能的影响
机译:通过低温工艺在(110)衬底上具有ALD-TiN / HfO_2栅堆叠的高性能pMOSFET
机译:绝缘固体的第一原理建模:响应特性,铁电超晶格及其界面。
机译:在一个反应器中通过等离子体增强的ALD和CVD制备的有机-无机薄多层膜的防潮性能
机译:ALD锡覆盖层对N-FINFET与ALD HFO2 / TIN覆盖/ Tial栅极堆叠的PBTI特性的影响