Fully ALD-grown TiN/Hf_(0.5)Zr_(0.5)O_2/TiN stacks: Ferroelectric and structural properties

摘要

Since the discovery of ferroelectricity (FE) in HfO_2-based thin films, they are gaining increasing attention as a viable alternative to conventional FE in the next generation of non-volatile memory devices. In order to further increase the density of elements in the integrated circuits, it is essential to adopt a three-dimensional design. Since atomic layer deposition (ALD) processes are extremely conformal, ALD is the favored approach in the production of 3D ferroelectric random access memory. Here, we report the fabrication of fully ALD-grown capacitors comprising a 10-nm-thick FE Hf_(0.5)Zr_(0.5)O_2 layer sandwiched between TiN electrodes, which are subjected to a detailed investigation of the structural and functional properties. The robust FE properties of Hf_(0.5)Zr_(0.5)O_2 films in capacitors are established by several alternative techniques. We demonstrate a good scalability of TiN/Hf_(0.5)Zr_(0.5)O_2/TiN FE capacitors down to 100-nm size and the polarization retention in the test 'one transistor-one capacitor' (1T-1C) cells after 1010 writing cycles. The presence of a non-centrosymmetric orthorhombic phase responsible for FE properties in the alloyed polycrystalline Hf_(0.5)Zr_(0.5)O_2 films is established by transmission electron microscopy. Given the ability of the ALD technique to grow highly conformal films and multilayered structures, the obtained results indicate the route for the design of FE non-volatile memory devices in 3D integrated circuits.