Single-photon emission of InAs/InP quantum clashes at 1.55μm and temperatures up to 80 K

摘要

We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55μm at the elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g~((2))(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that the charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as the non-classical light emitters for long-distance fiber-based secure communication technologies.