基于InAs单量子点的单光子干涉

摘要

利用分子束外延生长InAs单量子点样品,测量了温度为5 K时单量子点的荧光(PL)光谱.采用时间关联光子.强度测量(HBT)验证了PL光谱具有单光子发射特性.单光子通过马赫曾德尔(MZ)干涉仪,验证了单光子自身具有干涉特性.测量了当MZ干涉仪两臂偏振方向的夹角改变时对应的单光子干涉及条纹可见度的变化.%Single InAs quantum dot (QD) sample is grown by molecular-beam epitaxy ( MBE ) , and the photoluminescence (PL) from a single QD at 5 K is measured. By means of Hanbury-Brown and Twiss (HBT) setup, we measure the photon correlation of the PL which indicates that the PL of QD is single-photon emission. This single-photon source is used to demonstrate experimentally the single-photon interference via Mach-Zehnder (MZ) interferometer. In addition, the measured interference and fringe visibility are analyzed by changing the different linear polarization of the photon between two arms of MZ interferometer.