1.55 μm photon emission from droplet epitaxy InAs quantum dots on InP(111)A

摘要

Recently, we have successfully created symmetric InAs QDs on InAlAs/InP(111)A substrateusing droplet epitaxy. However, the previous samples were not sufficiently optimized: the dot sizedistribution is relatively large so that careful dot selection is required to find a dot that emits at 1.55 μm. Inthis study, we extend the droplet epitaxy scheme to achieve a purely 1.55 μm photon emission. The use of astate-of-the-art superconducting photon detector allows us to investigate single photon emission dynamicsin the standard telecom C-band.