Nanograin-enhanced in-plane thermoelectric figure of merit in n-type SiGe thin films

摘要

SiGe thin films are desirable candidates for many thermoelectric applications because of their low cost, low toxicity, and high compatibility with microelectronics fabrications. Currently, their applications are limited by their very poor thermoelectric performance. In this study, phosphorus-doped SiGe thin films with improved thermoelectric properties were grown using low pressure chemical vapor deposition, and the effects of different annealing treatments, doping concentration, composition, and temperature on their thermoelectric properties were explored. It is found that the segregation of phosphorus dopants plays an important role in grain growth and thermoelectric transport properties. The improved thermoelectric performance is mainly attributed to the significantly reduced in-plane thermal conductivity by the naturally formed nanograins. By adjusting the growth conditions, doping and post treatments, an in-plane ZT～ 0.16 at 300K was obtained for the optimized n-type samples, which is even ～50% higher than the record of bulk SiGe.