P-doping and efficient carrier injection induced by graphene oxide for high performing WSe_2 rectification devices

摘要

In this work, we fabricated multi-layer WSe_2 rectifying diodes using graphene oxide (GO) as p-doping material on one side of the contacting electrodes. This GO layer can reduce the contact resistance by forming a tunneling barrier for efficient hole injection, while it increases the contact resistance for the injection of electrons. Results of Raman shift spectra and the opto-electric response of the device confirmed the p-doping effect caused by the GO layer and the formation of a barrier, respectively. We observed a gate tunable rectification effect with a forward/reverse current ratio of 104 and low reverse bias current of 10~(－1) A. Applying a GO layer in the fabrication of two-dimensional transition metal dichalcogenides based devices is a very useful method in the applications in future nanotechnologies.