Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources

摘要

A simple and unique laser scheme comprised of a finite-size nanopillar array on a silicon-on-insulator grating layer is introduced for realizing an on-chip monolithically integrated light source. A photonic band-edge mode, confined by the grating substrate in the vertical direction, shows a quality factor as high as 4000. We show that the proposed laser cavity allows direct coupling into a waveguide, which is essential for monolithic integration. In addition, Ⅲ -Ⅴ semiconductor nanopil-lars are grown on a silicon-on-insulator grating substrate in order to demonstrate the feasibility of epitaxy on 3D surfaces. These results provide a practical solution for on-chip integration of a monolithic light source.