Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
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机译:包括:有源层,其设置在形成于GaAs衬底上的上多层膜反射镜和下多层膜反射镜之间,并由Al x Sub形成的低折射率层的周期性结构形成。 > Ga 1-x Sub> As(0.8≦x≦1)和由Al y Sub> Ga 1-y Sub>形成的高折射率层当(0≤y≤x)时,低折射率层和高折射率层中的至少一者为n型。下部电极设置在下部多层膜反射镜与有源层之间,并配置为向有源层注入电流。
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