机译:反向InAs / GaSb异质结构中的远红外边缘光响应和持久边缘传输
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA;
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA,Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, USA;
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA;
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA;
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA;
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA;
Sandia National Laboratories, P.O. Box 5800, Albuquerque, New Mexico 87185, USA;
机译:InAs / GaSb量子阱中的隐边缘Dirac点和稳健的量子边缘传输
机译:隐藏的边缘DIRAC点和INAS / GASB量子井中的鲁棒量子边缘传输
机译:InAs和InAs / GaSb量子阱中的边缘传输
机译:基于单极性电流阻挡层的基于II型InAs / GaSb超晶格的长波红外光电二极管的异质结构带工程
机译:InAs / GaSb和基于InAs / InAsSb II型超晶格的红外器件的暗电流抑制,光学性能改进和高频操作
机译:InAs / GaSb和GaSb / InAs核-壳纳米线的能带反转间隙
机译:远红外边缘光响应和持续边缘传输 反Inas / Gasb异质结构