Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping

摘要

Free layers with double MgO/CoFeB interfaces are an established solution for improving the thermal stability at small device dimensions in perpendicular spin transfer torque-magnetic random access memory devices. A thin spacer layer, composed usually of Ta, W, Hf, etc., is used to ease crystallization and improve the perpendicular magnetic anisotropy. Here, we use ferromagnetic resonance to evaluate the impact of Ta or W containing spacer layers on the intrinsic anisotropy H_k and damping α parameters. While both spacer materials enable similar tunnel magneto-resistance and anisotropy values, W typically generates a higher damping. Ta-based spacers are therefore likely better candidates for very low switching current applications.