机译:InGaN量子点中随温度变化的精细结构分裂
Department of Physics, University of Oxford, Parks Road, Oxford, United Kingdom;
Department of Physics, University of Oxford, Parks Road, Oxford, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, United Kingdom;
Department of Physics, University of Oxford, Parks Road, Oxford, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge, United Kingdom;
Department of Physics, University of Oxford, Parks Road, Oxford, United Kingdom;
机译:通过耦合的InGaN / GaN量子阱和量子点结构提高绿色InGaN量子点的内部量子效率
机译:铯铅卤化铯钙钛矿量子点的温度依赖性光致发光:低温下CSPBBR3和CSPB(BR / I)(3)量子点的光致发光峰分裂
机译:As / GaAs量子点分子结构自组装横向的激子精细结构分裂
机译:IngaN量子阱和量子点结构中量子点状定位中心的比较研究
机译:通过Stranski-Krastanov方法开发的Ingan量子点和液滴异质外延。
机译:衬底取向对InAs / InP纳米线量子点的激子精细结构分裂的影响
机译:InGaN量子点中随温度变化的精细结构分裂