首页> 外文期刊>Applied Physics Letters >Wide tunability and electron transfer in GaAs/AIGaAs quantum well photodetector by magnetic field
【24h】

Wide tunability and electron transfer in GaAs/AIGaAs quantum well photodetector by magnetic field

机译:GaAs / AIGaAs量子阱光电探测器中磁场的广泛可调性和电子转移

获取原文
获取原文并翻译 | 示例
           

摘要

One strategy for terahertz (THz) detection in GaAs/AIGaAs quantum well photodetectors under the magnetic field is reported. The THz detection begins to operate after the normally empty hydrogenic donor ground states in the AlGaAs barriers become populated by electrons transferred from the GaAs wells. Through the Landau quantization arising from a perpendicular magnetic field, we achieved the electron transfer from subband Landau levels in the GaAs wells at liquid helium temperature when the magnetic field reaches a certain threshold. One detector based on this strategy exhibited a dramatic range of frequency tunability of 3.20-6.13 THz. Our photothermal ionization spectroscopy measurements show quantitative agreement with the theoretical calculation of intradonor transition energies, verifying the origin of the strongly enhanced frequency tunability from the Zeeman behavior of transferred electrons in the AlGaAs barriers. This finding is useful for exploring magneto-optical effects and realization of wide tunability in THz photodetectors.
机译:报道了磁场下GaAs / AIGaAs量子阱光电探测器中太赫兹(THz)检测的一种策略。在AlGaAs势垒中通常为空的氢供体基态被从GaAs阱传输来的电子所占据后,THz检测开始运行。通过垂直磁场引起的Landau量化,当磁场达到一定阈值时,我们在液氦温度下实现了GaAs阱中子带Landau能级的电子转移。基于此策略的一个检测器显示出3.20-6.13 THz的频率可调范围。我们的光热电离光谱测量结果显示,其与供体内跃迁能的理论计算在数量上相符,从而证明了AlGaAs势垒中转移电子的塞曼行为大大增强了频率可调谐性。这一发现对于探索磁光效应和实现太赫兹光电探测器的宽可调性很有用。

著录项

  • 来源
    《Applied Physics Letters》 |2017年第19期|192102.1-192102.4|共4页
  • 作者单位

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China ,Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

    Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号