机译:1 kA / cm〜2和960 V E型β-Ga_2O_3垂直晶体管的击穿机制
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA;
Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan;
Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan;
Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan;
Hosei Univ, Ctr Micronano Technol, Tokyo 1840003, Japan;
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA;
机译:垂直Gan-on-Si肖特基屏障二极管的反转泄漏和故障机制,无植入终止
机译:GaN垂直功率FinFET的泄漏和击穿机制
机译:GaN立式电力FINFET的泄漏和击穿机制
机译:AlGaN / Si-GaN结构中的垂直泄漏/击穿机制
机译:在标准CMOS技术中实现垂直双极晶体管,用于设计低成本BICMOS集成电路
机译:作为后CMOS器件基于石墨烯的横向异质结构晶体管表现出比基于石墨烯的垂直晶体管更好的固有性能
机译:衬底电阻率对垂直泄漏,击穿和捕获的衬底电阻率的影响