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机译:最外面的algao_x本地氧化物作为GaAs / Algaas Core-MultiShell纳米线的保护层
Ehime Univ Grad Sch Sci & Engn 3 Bunkyo Cho Matsuyama Ehime 7908577 Japan;
Ehime Univ Grad Sch Sci & Engn 3 Bunkyo Cho Matsuyama Ehime 7908577 Japan;
Linkoping Univ Dept Phys Chem & Biol S-58183 Linkoping Sweden;
Linkoping Univ Dept Phys Chem & Biol S-58183 Linkoping Sweden;
Linkoping Univ Dept Phys Chem & Biol S-58183 Linkoping Sweden;
Ehime Univ Grad Sch Sci & Engn 3 Bunkyo Cho Matsuyama Ehime 7908577 Japan;
Nanowire; Si; GaAs; Oxide; passivation; Luminescence; Epitaxy;
机译:GaAs(311)B衬底上覆盖有AlGaAs层的GaAs / AlGaAs纳米线
机译:具有外延增益控制的同轴GaAs-AlGaAs核-多壳纳米线激光器
机译:GaAs / AlGaAs核-多壳纳米线中电子集体激发的非弹性光散射光谱预测
机译:GaAs / GaNAs核-多壳纳米线的晶体结构
机译:MOCVD生长的GaAs / AlGaAs核壳纳米线的光致发光和共振拉曼光谱。
机译:AlGaAs / GaAs异质结优化GaAs纳米线pin结阵列太阳能电池
机译:最外面的藻掌X天然氧化物作为GaAs / Algaas核心多电池纳米线的保护层
机译:平面基于原生氧化物的alGaas-Gaas-InGaas量子阱微盘激光器