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机译:金属化学气相沉积基质杂散对碳杂质掺入与电学性质的影响
Univ Sci & Technol China Sch Nano Technol & Nano Bion Hefei 230026 Peoples R China|Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Univ Sci & Technol China Sch Nano Technol & Nano Bion Hefei 230026 Peoples R China|Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
Univ Sci & Technol China Sch Nano Technol & Nano Bion Hefei 230026 Peoples R China|Chinese Acad Sci Suzhou Inst Nanotech & Nanobion Suzhou 215123 Peoples R China|Chinese Acad Sci Key Lab Nanodevices & Applicat Suzhou 215123 Peoples R China;
机译:Al掺杂对Al_(2)O_(3)衬底上有机金属化学气相沉积生长外延GaN薄膜的晶格应变和电性能的影响
机译:生长参数对金属有机化学气相沉积法生长GaAs中残留杂质掺入的影响
机译:衬底取向错误对通过金属有机化学气相沉积法生长的N极GaN薄膜性能的影响
机译:通过等离子体辅助金属有机化学气相沉积法在Si(111)衬底上生长的Al_XGA_1-XN / GaN异质结构薄膜的微观结构和光学性质
机译:通过金属有机化学气相沉积法生长的氮化铟,氮化铟镓合金的光学,结构和传输性能。
机译:金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
机译:通过有机金属化学气相沉积法在ZnSe中掺入碳
机译:衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响