Organic Ferroelectric Diodes with Long Retention Characteristics Suitable for Non-Volatile Memory Applications

摘要

Retention performance of organic metal-ferroelectric-insulator-semiconductor (MFIS) diodes composed of random copolymer poly-(vinylidene fluoride)-trifluoroethylene [P(VDF-TrFE)] was drastically improved by introducing poly(methyl methacrylate) (PMMA). Only a small amount of PMMA blended to P(VDF-TrFE) copolymer improved the insulating property of thin ferroelectric films. The MFIS diode with 1.65 wt% PMMA-blended P(VDF-TrFE) film achieved the retention time longer than 10~6 s until now and it showed no obvious degradation of switching charge. Precise control of PMMA composition and the crystallization condition made it possible to achieve the above mentioned performance.