Extremely Small Proximity Effect in 30 keV Electron Beam Drawing with Thin Calixarene Resist for 20 × 20 nm~2 Pitch Dot Arrays

摘要

We studied proximity effect in 30 keV electron beam (EB) drawing with calixarene resist for patterned media and quantum devices. Using about 15-nm-thick calixarene resist on Si substrate in conventional EB drawing system, the proximity effect has been studied by forming and observing 20-, 25-, 30-, and 40-nm-pitch resist dot arrays and measuring exposure dosage intensity distribution (EID) function. As a result, the proximity effect is negligible small due to comparing with some dot sizes in center, side and corner of 2μm square with 25 × 25 nm~2 pitch dot arrays. In addition, the proximity effect parameter η in EID function is less than 0.3. It is clear that the EB drawing and calixarene resist system is very suitable for forming ultrahigh packed dot arrays pattern. We demonstrated 20 × 20 nm~2 pitch resist dot arrays (about 1.6Tb/in.~2) with a dot diameter of about 14 nm and the same size as everywhere in the pattern.