首页> 外文期刊>Applied physics express >Investigation of the Fabrication Parameters Affecting the Cathodoluminescence Property of ZnAl_2O_4:Mn Green Phosphors
【24h】

Investigation of the Fabrication Parameters Affecting the Cathodoluminescence Property of ZnAl_2O_4:Mn Green Phosphors

机译:影响ZnAl_2O_4:Mn绿色荧光粉阴极发光特性的制备参数研究

获取原文
获取原文并翻译 | 示例

摘要

We investigated systematically the effects of fabrication parameters on the luminescent property of ZnAl_2O_4:Mn phosphor, which emits a highly chromatic pure green light. The samples used were synthesized in the air at 1200℃ by a solid phase method using ZnO, α-Al_2O_3, and MnCl_2 or MnCO_3 powders, followed by thermal treatment in a reducing atmosphere at temperatures (T_r) from 800 to 1200℃. We confirmed that the cathodoluminescence (CL) property of the as-synthesized sample strongly depends on the molar ratio of Zn and Al atoms in the source (R_(Zn/Al)- Namely, intense CL was observed only from the samples synthesized from the source with R_(Zn/Al)< 0.5, indicating that the Zn-deficient conditions are favorable for Mn impurities to be incorporated into the Zn site of ZnAl_2O_4. More importantly, it is suggested from the T_r dependence of CL that most of the Mn impurities in the samples synthesized under the Zn-deficient conditions are in the state of the divalent ions even without a reduction treatment.
机译:我们系统地研究了制造参数对ZnAl_2O_4:Mn荧光粉的发光性能的影响,该荧光粉发出高色度的纯绿色光。使用ZnO,α-Al_2O_3和MnCl_2或MnCO_3粉末,通过固相法在1200℃的空气中合成样品,然后在还原气氛中于800到1200℃的温度(T_r)进行热处理。我们确认了合成样品的阴极发光(CL)性质强烈取决于源中Zn和Al原子的摩尔比(R_(Zn / Al)-即仅从由C合成的样品中观察到强CL R_(Zn / Al)<0.5的碳源表明,缺锌条件有利于Mn杂质掺入ZnAl_2O_4的Zn位。更重要的是,从CL的T_r依赖性可以看出,大多数Mn即使没有还原处理,在缺锌条件下合成的样品中的杂质也处于二价离子的状态。

著录项

  • 来源
    《Applied physics express》 |2009年第10期|092302.1-092302.5|共5页
  • 作者单位

    Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan;

    Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan;

    Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan;

    Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号