机译:在4.5 K下工作的硅双量子点中的侧门控制点间静电耦合
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan;
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan;
School of Electronics and Computer Science, University of Southampton, High field, Southampton SO17 1BJ, U.K. Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan SORST-JST Chiyoda, Tokyo 102-0075, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan SORST-JST Chiyoda, Tokyo 102-0075, Japan;
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro, Tokyo 152-8552, Japan SORST-JST Chiyoda, Tokyo 102-0075, Japan;
机译:通过相邻金属栅极调谐蚀刻的石墨烯双量子点的点间隧道耦合
机译:提取硅中几个施主量子点之间的点间隧道耦合
机译:具有可控点间隧道耦合的2×2量子点阵列
机译:具有多个栅极的双量子点单电子晶体管的可调耦合电容
机译:硅纳米结构静电和应变诱导的量子点
机译:通过相邻金属栅极调整蚀刻的石墨烯双量子点的点间隧道耦合
机译:控制在4.5K下工作的非对称硅双量子点中的点间静电耦合
机译:碳纳米管双量子点的局域门控制。