Monolithically Integrated InGaN-Based Multicolor Light-Emitting Diodes Fabricated by Wide-Stripe Selective Area Metal-Organic Vapor Phase Epitaxy

摘要

We have demonstrated monolithic integration of multicolor light-emitting diodes (LEDs) by selective-area metalorganic vapor phase epitaxy (SA-MOVPE). The use of relatively wide (>30μm) masks resulted in a large in-plane modulation of both InGaN layer thickness and composition, allowing us a wide range of wavelength modulation. A wider mask shifted the electroluminescence spectrum to longer wavelengths due to vapor-phase diffusion of precursors. LED elements were formed at the center of the 60-μm-wide growth area, the peak wavelength of which covered 454-545 nm around turn-on voltages and 454-485 nm under a high-injection condition.