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Metal-organic chemical vapor-phase deposition process for fabricating light-emitting devices
Metal-organic chemical vapor-phase deposition process for fabricating light-emitting devices
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机译:用于制造发光器件的金属有机化学气相沉积工艺
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摘要
A metal-organic chemical vapor-phase deposition process for fabricating a layer of a Group II-VI compound semiconductor using an organometallic compound based on bis(cyclopentadienyl)magnesium having a vapor pressure in the range of from 1.3×10 Pa to 1.3×10.sup.2 Pa at a temperature of 330° K. The present invention also provides a light-emitting device which is fabricated by means of the metal-organic vapor-phase deposition process above. The process according to the present invention provides a magnesium-containing compound semiconductor layer having an accurately controlled composition, and it readily enables the fabrication of a compound semiconductor layer having a grated structure.
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