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机译:(100)结合Si微晶技术的快速熔体生长在绝缘基板上的取向控制Ge大条纹
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan;
rnDepartment of Electronics, Kyushu University, Fukuoka 819-0395, Japan;
rnDepartment of Electronics, Kyushu University, Fukuoka 819-0395, Japan;
rnDepartment of Electronics, Kyushu University, Fukuoka 819-0395, Japan;
rnDepartment of Electronics, Kyushu University, Fukuoka 819-0395, Japan;
rnDepartment of Electronics, Kyushu University, Fukuoka 819-0395, Japan;
rnDepartment of Electronics, Kyushu University, Fukuoka 819-0395, Japan;
rnDepartment of Electronics, Kyushu University, Fukuoka 819-0395, Japan;
rnDepartment of Electronics, Kyushu University, Fukuoka 819-0395, Japan;
机译:通过硅微晶种形成与快速熔化生长相结合的(100)硅平台上的绝缘体取向Ge-on-Ge结构
机译:通过硅微晶种形成与快速熔化生长相结合的(100)硅平台上的绝缘体取向Ge-on-Ge结构
机译:通过从Si(1 1 1)微种子快速熔融生长获得的应变单晶GOI(绝缘体上的Ge)阵列
机译:利用RTA技术通过SiGe混合触发快速熔化生长在Si平台上形成绝缘体上Ge的结构
机译:石墨烯及其衍生物:通过扩散镍在绝缘基板上的研究进展及石墨烯的生长
机译:CVD法在Ge(100)/ Si(100)衬底上生长石墨烯
机译:通过Si(111)微粒的快速熔化生长,应变单晶GOI(GE在绝缘体上)阵列