High-Performance P-Channel Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on H-Terminated (111) Surface

摘要

Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (～5kΩ/sq) has been obtained compared with widely used (001) diamond surfaces (～10Ω/sq). Using the hole accumulation layer channel, a high drain current density of -850 mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface.