Ultraviolet Nano Imprint Lithography Using Fluorinated Silicon-Based Resist Materials

摘要

Fluorinated silicon-based resist materials have recently been applied as ultraviolet crosslinkable materials for nano imprint lithography. I report and demonstrate the step and flash nano imprint lithography process using the newly fluorinated silicon-based resist materials for next generation technologies. This paper presents progress in the formulation of advanced resist materials design, the development of suitable ultraviolet imprint conditions and etch processes to achieve thin residual resist layers, low volumetric shrinkage of the resist film, and low imprint pressures for defect reduction. High quality imprint images were produced with multiple pattern-structured templates on wafers using these developed fluorinated silicon-based resist materials.