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首页> 外文期刊>Annales de l'I.H.P >Improved Red Photoluminescence and Ferroelectricity in Layered Composite (Bi,Eu)4Ti_3O)12/ZnO Thin Films
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Improved Red Photoluminescence and Ferroelectricity in Layered Composite (Bi,Eu)4Ti_3O)12/ZnO Thin Films

机译:层状复合(Bi,Eu)4Ti_3O)12 / ZnO薄膜中红色光致发光和铁电性的改善

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摘要

We report on the improved red emission and ferroelectricity of three layered composite (Bi,Eu)4Ti3O12 (BEuT)/ZnO thin films prepared by chemical solution deposition. The introduction of a ZnO layer leads to the enhanced crystallization and the change in preferential orientation of the BEuT layer. All the composite films showed stronger red photoluminescence than pure BEuT thin films. The addition of a ZnO layer also greatly influenced the ferroelectricity of the composite thin films. A well-defined polarization-electric field hysteresis loop can be observed in the BEuT/ ZnO composite films.
机译:我们报告了通过化学溶液沉积制备的三层复合(Bi,Eu)4Ti3O12(BEuT)/ ZnO薄膜的改进的红色发射和铁电性。 ZnO层的引入导致结晶增强和BEuT层优先取向的改变。所有复合膜均显示出比纯BEuT薄膜更强的红色光致发光。 ZnO层的添加也极大地影响了复合薄膜的铁电性。在BEuT / ZnO复合膜中可以观察到清晰的极化电场磁滞回线。

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  • 来源
    《Annales de l'I.H.P 》 |2011年第3期| p.032103.1-032103.3| 共3页
  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, P. R. China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, P. R. China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, P. R. China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, P. R. China;

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