Short-Pulse Operation of a High-Power-Density Proton-Implanted Vertical-Cavity Surface-Emitting Laser Array

摘要

We report on a GaAs-based high-power-density vertical-cavity surface-emitting laser diode (VCSEL) array with ion-implanted isolated current apertures. A peak output power of 40.6 W has been achieved from the VCSEL array with seven emitters under 100-ns-pulse operation. This is the first demonstration of a ten-watt-class output power for a VCSEL array with ion-implanted isolated current aperture configuration. The corresponding power-density is estimated to be 73.8kW/cm~2, which is three times greater than the record power-density of the short-pulse-operated oxide-confined VCSEL.