Effect of SiO_2 Nanoextractor on Far-Field Radiation Pattern of Vertical Light-Emitting Diodes

摘要

GaN-lnGaN vertical-injection light-emitting diodes (VLEDs) having SiO_2 nanorod arrays were demonstrated to enhance the light extraction efficiency and light propagation to the side of the LEDs. The full width at half maximum (FWHM) of the radiation patterns of the VLED having a nano-extractor (115-117°) was more extracted than that of conventional VLED (108-110°). Furthermore, the light output power of the VLEDs having nanorods was enhanced by 7.9% compared with that of the conventional VLEDs. Based on the measured far-field radiation patterns, the nanorods suppressed the total internal reflection and extracted the light to the side of the thin-GaN LEDs.