...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>_Applied Physics Express >Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well Ⅲ-Nitride Light-Emitting Diodes
【24h】

Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well Ⅲ-Nitride Light-Emitting Diodes

机译：电子溢出对单量子阱Ⅲ-氮化物发光二极管的发射波长和晶体取向的依赖性

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The dependence of electron overflow on peak emission wavelength was investigated in single-quantum-well (SQW) light-emitting diodes (LEDs) grown on the (2021), (2021), (1010), and (0001) planes. Each plane exhibited a characteristic "critical" emission wavelength where the output power of LEDs (measured at a current density of 22 A/cm~2) without electron blocking layers (EBLs) decreased significantly compared with that of LEDs with EBLs. Compared with LEDs grown on the (0001) plane, LEDs grown on the (2021), (2021), and (1010) planes exhibited shorter critical wavelengths, indicating that electron overflow was inhibited in LEDs grown on orientations with reduced polarization.
机译：在（2021），（2021），（1010）和（0001）平面上生长的单量子阱（SQW）发光二极管（LED）中研究了电子溢出对峰值发射波长的依赖性。每个平面均展现出特征性的“临界”发射波长，与不带电子阻挡层（EBL）的LED相比，不带电子阻挡层（EBL）的LED的输出功率（以22 A / cm〜2的电流密度测量）明显降低。与在（0001）平面上生长的LED相比，在（2021），（2021）和（1010）平面上生长的LED表现出更短的临界波长，这表明在偏振方向减小的LED上抑制了电子溢出。

著录项

  • 来源
    《_Applied Physics Express 》 |2013年第5期| 052103.1-052103.3| 共3页
  • 作者

    Yoshinobu Kawaguchi; Shih-Chieh Huang; Robert M. Farrell; Yuji Zhao; James S. Speck; Steven P. DenBaars; Shuji Nakamura;

  • 作者单位

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.,Advanced Technology Research Laboratories, Sharp Corporation, Tenri, Nara 632-8567, Japan;

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.,R&D Department of LED Unit, Walsin Lihwa Corporation, Taoyuan 326, Taiwan;

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.,Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

    Materials Department, University of California, Santa Barbara, CA 93106, U.S.A.,Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, U.S.A.;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号