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机译:通过优化InGaN / GaN有源区实现500 nm以上的InGaN激光二极管
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China ,Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China ,Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China ,Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China ,Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China ,Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China ,Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China ,Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China ,Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China ,Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, People's Republic of China;
机译:InGaN / GaN多量子阱有源区中具有恒定温度增长的绿色激光二极管
机译:绿色激光二极管具有恒温生长的InGaN / GaN多量子阱有源区
机译:使用统计设计确定相互作用效应来优化InGaN / GaN 405 nm发光二极管的有源区
机译:420-500 nm激光发射的交错式InGaN量子阱有源区的光学增益分析
机译:InGaN / GaN发光二极管热性能的调查分析
机译:具有优化的GaN势垒的InGaN / GaN多层量子点黄绿色发光二极管
机译:420 nm InGaN / GaN激光二极管的模拟与优化
机译:用于激光二极管应用的GaN,InGaN和GaN / InGaN量子阱结构的mBE生长和性质