Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment

摘要

We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs) and performed hydrogen peroxide (H_2O_2) vapor treatment at 350 ℃. We demonstrated that H_2O and H_2O_2 vapor treatment enhanced the performance of the GIO TFTs. The GIO TFT only annealed in ambient air at 350 ℃ performed very poorly, whereas those annealed in air with H_2O_2 and H_2O vapor at 350 ℃ exhibited significantly improved electrical performance. In particular, the H_2O_2-vapor-treated GIO TFTs had a mobility of 3.22cm~2V~(-1) s~(-1). We believe that this.method can help decrease the annealing temperature in order to obtain high-performance GIO TFTs.