机译:气源分子束外延在Ga(100)衬底上异质外延生长GaAsBi
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Sch Phys, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Sch Phys, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Univ Chinese Acad Sci, Sch Phys, Beijing 100049, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China|Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
机译:利用分子束外延在(100)GaAs衬底上生长GaAsBi / GaAs多量子阱
机译:非化学计量的GaAsBi / GaAs(100)分子束外延生长
机译:分子束外延利用两衬底温度技术生长的GaAsBi / GaAs MQW的铋通量依赖性
机译:通过分子束外延生长在Si(100)衬底上生长GaSb点成核层和薄膜GaSb
机译:硅(011)和硅锗(011)气源分子束外延:表面重建,生长动力学和锗偏析。
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响
机译:通过分子束外延对(100)GaAs基材的GaAsbi / GaAs多量子孔的生长
机译:mBE(分子束外延)在低衬底温度和生长速率下生长的Gaas薄膜的研究。