机译:温度对中红外区ZnO / MgZnO基量子级联探测器性能的影响
Xidian Univ, Sch Telecommun Engn, State Key Lab Integrated Serv Networks, Xian 710071, Peoples R China;
Xidian Univ, Sch Telecommun Engn, State Key Lab Integrated Serv Networks, Xian 710071, Peoples R China|Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China;
Xidian Univ, Sch Telecommun Engn, State Key Lab Integrated Serv Networks, Xian 710071, Peoples R China;
Xidian Univ, Sch Telecommun Engn, State Key Lab Integrated Serv Networks, Xian 710071, Peoples R China;
Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China;
Xidian Univ, Minist Educ Wide Band Gap Semicond Mat & Devices, Sch Microelect, Key Lab, Xian 710071, Peoples R China;
机译:MGZNO / ZnO量子级联检测器的噪声特性
机译:极化对ZnO / MgZnO量子级联检测器性能的影响
机译:蓝宝石衬底上生长的ZnO / MgZnO多量子阱中的室温激子自发和受激发射特性
机译:基于非极性ZnO / ZnMgO量子阱的短红外波长量子级联检测器
机译:基于ZnO和MgZnO薄膜的金属-半导体-金属器件的室温激子激射技术的发展。
机译:基于高效中红外量子级联激光器的室温连续波单片可调太赫兹源
机译:基于M平面ZnO / ZnMGO量子孔的短红外波长量子级联探测器