首页> 外文期刊>Applied physics express >Study on temperature effect on properties of ZnO/MgZnO based quantum cascade detector in mid-infrared region
【24h】

Study on temperature effect on properties of ZnO/MgZnO based quantum cascade detector in mid-infrared region

机译:温度对中红外区ZnO / MgZnO基量子级联探测器性能的影响

获取原文
获取原文并翻译 | 示例

摘要

The effect of temperature on a ZnO/Mg0.3Zn0.7O quantum cascade detector (QCD) in the mid-infrared region is investigated with consideration of bound-to-bound electronic-transport processes in the dark and under illumination. The temperature-dependent band structures of the QCD system, which comprises four quantum wells and five barriers in one period, are numerically calculated. The electronic transition is obtained with a standard electron-optical phonon Hamiltonian, and the photon absorption is described by the two-dimensional absorption coefficient. The responsivity of the ZnO/Mg0.3Zn0.7O QCD shows a good temperature stability without an obvious redshift, and the peak responsivity decreases by only 14% when the temperature increases from 50 to 300 K. (C) 2017 The Japan Society of Applied Physics
机译:考虑了在黑暗和光照条件下束缚到束缚的电子传输过程,研究了温度对中红外区ZnO / Mg0.3Zn0.7O量子级联检测器(QCD)的影响。数值计算了QCD系统的温度相关能带结构,该结构在一个周期内包含四个量子阱和五个势垒。用标准的电光声子哈密顿量获得电子跃迁,用二维吸收系数描述光子吸收。 ZnO / Mg0.3Zn0.7O QCD的响应度显示出良好的温度稳定性,没有明显的红移,当温度从50 K升高到300 K时,峰值响应度仅降低14%。(C)2017日本应用学会物理

著录项

  • 来源
    《Applied physics express》 |2017年第1期|011101.1-011101.4|共4页
  • 作者单位

    Xidian Univ, Sch Telecommun Engn, State Key Lab Integrated Serv Networks, Xian 710071, Peoples R China;

    Xidian Univ, Sch Telecommun Engn, State Key Lab Integrated Serv Networks, Xian 710071, Peoples R China|Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China;

    Xidian Univ, Sch Telecommun Engn, State Key Lab Integrated Serv Networks, Xian 710071, Peoples R China;

    Xidian Univ, Sch Telecommun Engn, State Key Lab Integrated Serv Networks, Xian 710071, Peoples R China;

    Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China;

    Xidian Univ, Minist Educ Wide Band Gap Semicond Mat & Devices, Sch Microelect, Key Lab, Xian 710071, Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号