首页> 外文期刊>Analytical Chemistry >IN SITU INVESTIGATION OF ALUMINUM GALLIUM ARSENIDE/GALLIUM ARSENIDE MULTILAYER STRUCTURES UNDER INERT AND REACTIVE MEDIA BY ATOMIC FORCE MICROSCOPY
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IN SITU INVESTIGATION OF ALUMINUM GALLIUM ARSENIDE/GALLIUM ARSENIDE MULTILAYER STRUCTURES UNDER INERT AND REACTIVE MEDIA BY ATOMIC FORCE MICROSCOPY

机译:原子力显微镜在惰性和反应介质下对砷化铝镓/砷化镓多层结构的原位研究

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In this paper we describe the analytical benefits of in situ preparation and imaging under inert and reactive media using an AlGaAs/GaAs superlattice structure as a well-defined model sample. Imaging under inert organic liquids like toluene has been made possible by means of a home-built sample holder which has been designed for mechanical mounting of small-scale, cleaved specimens and which works without polymer seals in the liquid cell. The results show that sensitive surfaces can be protected from atmospheric influences without the need for ultrahigh-vacuum conditions. Contrast development on the AlGaAs/GaAs system by preferential oxidation on the AlGaAs layers could be completely suppressed by covering the cross-sectional cleavage surface with toluene. In situ studies of corrosion processes on oxidized AlGaAs/GaAs cleavage surfaces have shown that 0.01 and 0.001 M HCl lead to pitting, while 0.1 M HCl results in a clear contrast inversion of the original corrugation of 0.3-0.6 mm. The described in situ imaging capability significantly enhances the information content of atomic force microscopy (AFM) images, since it allows assignment of chemical information to topographical features primarily seen in AFM images.
机译:在本文中,我们描述了使用AlGaAs / GaAs超晶格结构作为定义明确的模型样本在惰性和反应性介质下进行原位制备和成像的分析优势。借助内置的样品架,可以在惰性有机液体(如甲苯)下成像,该样品架设计用于机械安装小规模,裂解的样品,并且在液池中无需聚合物密封即可工作。结果表明,不需要超高真空条件就可以保护敏感表面不受大气影响。通过用甲苯覆盖横截面分裂表面,可以完全抑制由于优先在AlGaAs层上氧化而在AlGaAs / GaAs体系上形成的对比。在氧化的AlGaAs / GaAs劈裂表面上进行腐蚀过程的现场研究表明,0.01和0.001 M HCl导致点蚀,而0.1 M HCl导致原始波纹0.3-0.6 mm形成明显的反差。所描述的原位成像功能显着增强了原子力显微镜(AFM)图像的信息内容,因为它允许将化学信息分配给主要在AFM图像中看到的地形特征。

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