Use of nano-scale double-gate MOSFETs in low-power tunable current mode analog circuits

摘要

Use of independently-driven nano-scale double gate (DG) MOSFETs for low-power analog circuits is emphasized and illustrated. In independent drive configuration, the top gate response of DG-MOSFETs can be altered by application of a control voltage on the bottom gate. We show that this could be a powerful method to conveniently tune the response of conventional CMOS analog circuits especially for current-mode design. Several examples of such circuits, including current mirrors, a differential current amplifier and differential integrators are illustrated and their performance gauged using TCAD simulations. The topologies and biasing schemes explored here show how the nano-scale DG-MOSFETs may pave way for efficient, mismatch-tolerant and smaller circuits with tunable characteristics.