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CMOS phase-shifting circuits for wireless beamforming transmitters

机译:无线波束成形发射机的CMOS相移电路

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Two phase-shifting techniques for wireless beamforming transmitter applications are presented. The first performs quadrant selection using phase-offset local oscillators and fine-grain phase-shifting using RF phase shifters; a 5.2 GHz narrowband phase shifter is designed and fabricated in the CMOS subset of a 0.25 μm SiGe BiCMOS process. Using a tunable all-pass filter topology, it achieves a wide phase-shift range with low loss, and minimizes the number of on-chip passive elements. Measurement results show an insertion loss of 2 dB, an IIP3 of 1 dBm, and a total phase-shift range of 240°; power consumption of the core circuitry is 36.3 mW from a 2.5 V supply. The second approach, a phase-shifting up-converter based on Cartesian combining, achieves a 360° phase shift range that is independent of the operating frequency. Fabricated in 0.18 μm CMOS, it achieves 8 dB conversion gain, 4 dBm OP1 dB, 28 dB sideband rejection, and a 360° phase-shift range at 5.2 GHz without the explicit use of RF phase shifters. The power consumption of its core circuitry is 46.5 mW.
机译:提出了两种用于无线波束成形发射机应用的相移技术。第一种使用相移本机振荡器执行象限选择,并使用RF移相器执行细粒度相移。在0.25μmSiGe BiCMOS工艺的CMOS子集中设计并制造了5.2 GHz窄带移相器。使用可调全通滤波器拓扑结构,它可实现宽相移范围且具有低损耗,并最大程度地减少了片上无源元件的数量。测量结果显示插入损耗为2 dB,IIP3为1 dBm,总相移范围为240°; 2.5 V电源时,核心电路的功耗为36.3 mW。第二种方法是基于笛卡尔组合的移相上变频器,可实现与工作频率无关的360°相移范围。它采用0.18μmCMOS制成,无需显式使用RF移相器,即可实现8 dB的转换增益,4 dBm的OP1 dB,28 dB的边带抑制以及5.2 GHz的360°相移范围。其核心电路的功耗为46.5 mW。

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