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Impulse sensitivity function-based phase noise study for low-power source-coupled CMOS multivibrators

机译:基于脉冲灵敏度函数的低功耗源耦合CMOS多谐振荡器的相位噪声研究

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In this paper, two micropower frequency references implemented with a 0.13- and a 0.25-μm CMOS process for low-power sensor applications are presented. Both circuits are based on a power-optimized source-coupled CMOS multivibrator. The 2.0-MHz frequency reference uses a nominal 1.8–2.5-V supply voltage. The 24.6/307.2-kHz frequency reference is an evolution of the 2.0-MHz reference and operates with a lower supply of 1.0 V and provides two active operating modes. With 1-pF load capacitances, the 2.0-MHz and 24.6/307.2-kHz frequency references typically consume 6.7 μA and 230/750 nA, respectively. After presenting experimental results relating to frequency trimming and frequency stability, this paper concentrates on the phase noise study of the proposed frequency references. The procedure used to apply the impulse sensitivity function-based (ISF) phase noise method to CMOS oscillators is described in detail. The phase noise results of both the implemented references obtained with this method agree well with the measurements. Keywords Impulse sensitivity function - Low-power circuit - Low-voltage circuit - Multivibrator - Oscillator - Phase noise
机译:本文介绍了两种针对0.13和0.25μmCMOS工艺的微功耗频率参考,适用于低功耗传感器应用。两种电路均基于功率优化的源耦合CMOS多谐振荡器。 2.0 MHz频率基准使用标称的1.8–2.5V电源电压。 24.6 / 307.2-kHz频率基准是2.0-MHz基准的演进,采用1.0 V的较低电源供电,并提供两种有效的工作模式。利用1pF的负载电容,2.0MHz和24.6 / 307.2kHz的频率基准通常分别消耗6.7μA和230 / 750nA的电流。在介绍了与频率调整和频率稳定性有关的实验结果之后,本文着重于对所提出的频率参考进行相位噪声研究。详细介绍了将基于脉冲灵敏度函数(ISF)的相位噪声方法应用于CMOS振荡器的过程。用此方法获得的两个已实现参考的相位噪声结果与测量结果非常吻合。脉冲灵敏度功能-低功率电路-低压电路-多谐振荡器-振荡器-相位噪声

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