首页> 外文期刊>Analog Integrated Circuits and Signal Processing >A new current-mode fast-transient-response shunt regulator using CMOS technology
【24h】

A new current-mode fast-transient-response shunt regulator using CMOS technology

机译:采用CMOS技术的新型电流模式快速瞬态并联稳压器

获取原文
获取原文并翻译 | 示例

摘要

The demand for current-mode fast-transient-response shunt regulator is increasing for the growth of portable electronics, such as cellular phones, PDA, laptops, etc. A new current-mode fast-transient-response shunt regulator is presented in this paper. The proposed shunt regulator used a single Miller compensation capacitor to increase stability. The current-mode shunt regulator helps the transient response to be faster than the voltage-mode low-dropout regulator (LDO) and the power noise (bounce noise) is smaller than one. The proposed current-mode shunt regulator has been fabricated with TSMC 0.35 μm 2P4M CMOS technology. The experimental results show the transient-response time is only 400 ns within 0.5% error and the maximum output voltage dip is only 70 mV for full loading current variation. Moreover, the line and load regulations are 26 μV/mA and 8 ppm/mA, respectively. The dropout current is 1.0741 mA for loading current 150 mA. The active chip area is 226 μm × 310 μm.
机译:随着便携式电子产品(例如手机,PDA,笔记本电脑等)的发展,对电流模式快速瞬态并联稳压器的需求正在增长。本文提出了一种新型的电流模式快速瞬态并联稳压器。 。建议的并联稳压器使用单个Miller补偿电容器来提高稳定性。电流模式并联稳压器可帮助瞬态响应比电压模式低压差稳压器(LDO)更快,并且电源噪声(反弹噪声)小于1。拟议的电流模式并联稳压器采用TSMC 0.35μm2P4M CMOS技术制造。实验结果表明,在满载电流变化的情况下,瞬态响应时间仅为400 ns,误差为0.5%,最大输出电压骤降仅为70 mV。此外,线路和负载调节分别为26μV/ mA和8 ppm / mA。对于150 mA的负载电流,压差电流为1.0741 mA。有源芯片面积为226μm×310μm。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号