Growth rate of diamond on polycrystalline <110> diamond substrates from carbon disulfide in hydrogen by hot-filament-assisted chemical vapor deposition

摘要

The growth rates for the deposition of diamond by not- filament-assisted chemical vapor deposition using carbon disulfide (CS_2) in hydrogen and methane (CH_4) in hydrogen were investigated on polished, <110> textured, polycrystal- line diamond substrates. The carbon concentration in each system was varied from 1/100 to 2.5/100. The deposition rate increased proportionately with carbon concentration for both systems.