A compact thin power amplifier module for 1.9-GHz cellular phone systems has been incorporated using MCM-D technology and planarization technology of all passive components. The module consists of four Si-MOSFETs and is 9.4/spl times/7.2/spl times/1 mm, resulting in a volume of 0.07 cc including its shield metallic case. The module was designed with the computer simulator, Libra, and simplified lumped-element equivalent circuits of passive components. The fabricated module exhibited an output power of 33.3 dBm and power efficiency of 29%. These results suggest that these technologies will be very useful for the miniaturization of circuit components for GHz-band mobile communications.
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