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Thermosonic Flip Chip Interconnection Using Electroplated Copper Column Arrays

机译:使用电镀铜柱阵列的热超声倒装芯片互连

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摘要

A novel flip chip process is reported in which bare dies are thermosonically bonded to arrays of electroplated copper columns formed on a substrate. The new process is intended as a low-cost, lead-free chip-on-board (COB) interconnection method for high-frequency devices. A detailed study has been performed of the electroplating and thermosonic bonding techniques involved. It was found that oxygen plasma treatment of the resist mask could increase the yield of the fine-pitch (<150 mum) column electroplating process, while the flatness of the resulting columns was affected by the plating current density and the sidewall profiles in the resist mold. Under optimal conditions, column arrays with flat tops could be produced with a 100% yield, and with a column height deviation of less than 0.5 mum over an area of 10 mmtimes10 mm. The array thermosonic bonding process was studied with the aid of Box-Behnken design of experiments based on response surface methodology. A second-order relationship between the input bonding variables and the bonding strength was derived and used to determine optimal process conditions. With this optimized process, silicon chips with aluminium metallization were thermosonically flip chip bonded to quartz test boards bumped with gold-capped copper columns. Sixteen prototype assemblies without underfill protection were evaluated by accelerated lifetime tests. The contact resistances of single column connections showed no significant change after 50 thermal shocks of 0 degC to 100 degC, and samples subjected to high-temperature storage remained intact at all bonding interfaces after 1.5 h at 300 degC. Thermal cycling between -55degC and 125 degC produced open-circuit defects in a small number of connections after 70 cycles
机译:报道了一种新颖的倒装芯片工艺,其中将裸芯片热粘合到形成在基板上的电镀铜柱的阵列上。该新工艺旨在作为一种用于高频设备的低成本,无铅板载芯片(COB)互连方法。已经对涉及的电镀和热超声键合技术进行了详细研究。已发现,对抗蚀剂掩模进行氧等离子体处理可以提高细间距(<150 mum)柱电镀工艺的产量,而所得柱的平整度受电镀电流密度和抗蚀剂侧壁轮廓的影响模子。在最佳条件下,可以以100%的产率生产具有平顶的柱阵列,并且在10毫米x 10毫米的面积上柱高度偏差小于0.5微米。借助Box-Behnken基于响应面方法的实验设计,研究了阵列热超声键合过程。得出了输入粘结变量和粘结强度之间的二阶关系,并将其用于确定最佳工艺条件。通过这种优化的工艺,热镀铝金属硅芯片被倒装芯片结合到石英测试板上,而石英测试板则被镀金的铜柱所撞击。通过加速寿命测试评估了16个没有底部填充保护的原型组件。在50度0摄氏度至100摄氏度的热冲击后,单列连接的接触电阻无明显变化,在300摄氏度1.5 h后,经受高温存储的样品在所有键合界面处均保持完整。 70次循环后,在少量连接中,-55℃至125℃的热循环会产生开路缺陷

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