CMOS Compatible High-Performance Nanolasing Based on Perovskite–SiN Hybrid Integration

摘要

Coherent light sources in silicon photonics are the long-sought Holy Grail because silicon-based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain engineering, and nonlinear process, are technologically demanding. Here, a hybrid lasing device composed of perovskite nanocrystals and silicon nitride nanobeam cavity is demonstrated. SiN photonic crystal naonobeam cavities are fabricated on a solid substrate with significantly improved thermal and mechanical stabilities compared to conventional suspended ones. In addition, adding a poly (methyl methacrylate) (PMMA)-encapsulation layer on top of the SiN can significantly boost the Q-factor of the cavity mode. By dispersing perovskite nanocrystals as emitters in the PMMA layer, high-performance coherent emissions are obtained in terms of lasing threshold, linewidth, and mode volumes. The work offers a compelling way of creating solution-processed active integrated photonic devices based on the mature platform of silicon photonics for applications in optical information science and photonic quantum technology.